High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V

Abstract

Abstract We report a recessed-gate enhancement-mode Al2O3-ZrO2/Al0.6Ga0.4N/Al0.4Ga0.6N metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) with drain current as high as 0.48 A mm−1 at a gate-source voltage of +12 V. This was enabled by a pseudomorphic HFET structure with graded back barrier for strain management and to screen the growth interface from the channel. The device exhibited a threshold-voltage (V TH) of 2.75 ± 0.57 V with absolute maximum V TH = 3.6 V, a +12.2 V shift from that for a depletion-mode MOSHFET fabricated on the same wafer. A 3-terminal breakdown voltage of 700 V was measured in the off-state, showing the viability of E-mode UWBG AlGaN for power electronics.