Improved Reliability for Back-End-of-Line Compatible Ferroelectric Capacitor With 3 Bits/Cell Storage Capability by Interface Engineering and Post Deposition Annealing
Author:
Affiliation:
1. Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan
2. Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
3. National Synchrotron Radiation Research Center, Hsinchu, Taiwan
Funder
Ministry of Science and Technology of Taiwan
Materials Analysis Technology Inc.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9965979/09932638.pdf?arnumber=9932638
Reference28 articles.
1. A Novel Ferroelectric Superlattice Based Multi-Level Cell Non-Volatile Memory
2. Improved Multi-bit Storage Reliablity by Design of Ferroelectric Modulated Anti-ferroelectric Memory
3. Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface
4. Material perspectives of HfO2-based ferroelectric films for device applications
5. Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm
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