Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface-Reference-Cited by-同舟云学术

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Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

Published:2020-02-14 Issue:6 Volume:127 Page:064105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hamouda W.¹^ORCID,Pancotti A.¹^ORCID,Lubin C.¹,Tortech L.²³^ORCID,Richter C.⁴^ORCID,Mikolajick T.⁴^ORCID,Schroeder U.⁴^ORCID,Barrett N.¹^ORCID

Affiliation:

1. SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette, France

2. Sorbonne Université, CNRS, Institut Parisien de Chimie Moléculaire, IPCM, 4 Place Jussieu, F-75005 Paris, France

3. LICSEN, NIMBE, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex, France

4. NaMLab gGmbH/TU Dresden, Nöthnitzer Str. 64, Dresden D-01187, Germany

Funder

Agence Nationale de la Recherche

Horizon 2020 Framework Programme

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5128502

Reference41 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

3. Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

4. Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System

5. The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

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1. Physical origin of hafnium-based ferroelectricity;Computational Materials Today;2024-12

2. In Situ Modulation of Oxygen Vacancy Concentration in Hf0.5Zr0.5O2−x Thin Films and the Mechanism of Its Impact on Ferroelectricity;Coatings;2024-09-02

3. Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of Zr_xHf_1–xO₂-Based Capacitors;ACS Applied Electronic Materials;2024-08-15

4. Insights into the origin of robust ferroelectricity in HfO2 -based thin films from the order-disorder transition driven by vacancies;Physical Review Applied;2024-08-09

5. CMOS-compatible Hf_0.5Zr_0.5O₂-based ferroelectric memory crosspoints fabricated with damascene process;Nanotechnology;2024-07-29

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