Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films-Reference-Cited by-同舟云学术

Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

Published:2018-01-09 Issue:3 Volume:10 Page:2701-2708
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chernikova Anna G.¹,Kozodaev Maxim G.¹,Negrov Dmitry V.¹,Korostylev Evgeny V.¹,Park Min Hyuk²^ORCID,Schroeder Uwe²^ORCID,Hwang Cheol Seong¹³^ORCID,Markeev Andrey M.¹^ORCID

Affiliation:

1. Moscow Institute of Physics and Technology, Institutskii per. 9, 141700 Dolgoprudny, Moscow Region, Russia

2. NaMLab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden, Germany

3. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b15110

Reference33 articles.

1. Ferroelectricity in Simple Binary ZrO2 and HfO2

2. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

3. Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films

4. Ferroelectricity in hafnium oxide thin films

5. An extensive study of the influence of dopants on the ferroelectric properties of HfO2

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