Demonstration of Wake-Up Free 6 nm Ultrathin ZrO₂-HfO₂ Superlattice Ferroelectric Capacitors With High Endurance Against Fatigue-Reference-Cited by-同舟云学术

Demonstration of Wake-Up Free 6 nm Ultrathin ZrO₂-HfO₂ Superlattice Ferroelectric Capacitors With High Endurance Against Fatigue

Published:2024-08 Issue:8 Volume:45 Page:1468-1471
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Liang Yan-Kui¹^ORCID,Liu Zhenhong¹^ORCID,Cai Zuocheng¹^ORCID,Han Xueyang¹^ORCID,Huang Huai-Ying²,Lin Yu-Ming²^ORCID,Yi Chang Edward³^ORCID,Lin Chun-Hsiung³^ORCID,Takenaka Mitsuru¹^ORCID,Toprasertpong Kasidit¹^ORCID,Takagi Shinichi¹^ORCID

Affiliation:

1. Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan

2. Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan

3. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Funder

Taiwan Semiconductor Manufacturing Company (TSMC), Japan Science and Technology Agency (JST) Core Research for Evolutional Science and Technology (CREST), Japan

Japan Society for the Promotion of Science (JSPS) KAKENHI, Japan

National Science and Technology Council (NSTC), Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/55/10612269/10550941.pdf?arnumber=10550941

Reference28 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Impact of Oxygen Vacancy Content in Ferroelectric HZO films on the Device Performance

3. Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing

4. Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes

5. Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films

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