An 18 dBm 155-180 GHz SiGe Power Amplifier Using a 4-Way T-Junction Combining Network-Reference-Cited by-同舟云学术

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An 18 dBm 155-180 GHz SiGe Power Amplifier Using a 4-Way T-Junction Combining Network

Published:2019-09 Issue: Volume: Page:
ISSN:
Container-title:ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)
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Author:

Kucharski Maciej,Ng Herman Jalli,Kissinger Dietmar

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8895615/8902346/08902847.pdf?arnumber=8902847

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Full G-band Power Amplifier with 34% Peak PAE in InP-DHBT Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

2. A 110-160GHz Wideband Power Amplifier in 0.13μm SiGe BiCMOS with 14.12dBm P_sat and 9.26% PAE;2023 IEEE MTT-S International Wireless Symposium (IWS);2023-05-14

3. Designing Future Wireless Networks (FWN)s With Net Zero (NZ) and Zero Touch (ZT) Perspective;IEEE Access;2023

4. A -Band Power Amplifier With Four-Way Combining in 0.13-μm SiGe;IEEE Microwave and Wireless Components Letters;2022-11

5. A 180-220-GHz, 12.7-dBm peak P_sat and 17.3% peak PAE Power Amplifier in 250-nm InP HBT;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

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