A Full G-band Power Amplifier with 34% Peak PAE in InP-DHBT Technology-Reference-Cited by-同舟云学术

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A Full G-band Power Amplifier with 34% Peak PAE in InP-DHBT Technology

Published:2023-09-18 Issue: Volume: Page:
ISSN:
Container-title:2023 18th European Microwave Integrated Circuits Conference (EuMIC)
language:
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Author:

Hossain M.¹,Doerner R.¹,Heinrich W.¹,Krozer V.¹

Affiliation:

1. Ferdinand-Braun-Institut (FBH) gGmbH,Germany

Funder

Ministry of Education

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288782.pdf?arnumber=10288782

Reference23 articles.

1. A 130-GHz Power Amplifier in a 250-nm InP Process with 32% PAE

2. An 18 dBm 155-180 GHz SiGe Power Amplifier Using a 4-Way T-Junction Combining Network

3. A High-Efficiency 142–182-GHz SiGe BiCMOS Power Amplifier With Broadband Slotline-Based Power Combining Technique

4. Compact 110–170 GHz amplifier in 50 nm mHEMT technology with 25 dB gain;merkle;2013 European Microwave Integrated Circuit Conference EuMIC,2013

5. D-Band and G-Band High-Performance GaN Power Amplifier MMICs

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