A -Band Power Amplifier With Four-Way Combining in 0.13-μm SiGe<i />-Reference-Cited by-同舟云学术

A -Band Power Amplifier With Four-Way Combining in 0.13-μm SiGe

Published:2022-11 Issue:11 Volume:32 Page:1343-1346

ISSN:1531-1309

Container-title:IEEE Microwave and Wireless Components Letters

language:

Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Aksoyak Ibrahim Kagan¹^ORCID,Mock Matthias¹^ORCID,Kaynak Mehmet²,Ulusoy Ahmet Cagri¹

Affiliation:

1. Institute of Radio Frequency Engineering and Electronics (IHE), Karlsruhe Institute of Technology, Karlsruhe, Germany
2. IHP Microelectronics, Frankfurt (Oder), Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/9941011/09793651.pdf?arnumber=9793651

Reference15 articles.

1. A 15 dBm 12.8%;-PAE compact D-band power amplifier with two-way power combining in 16 nm FinFET CMOS;philippe;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2020
2. A Broadband 110–170-GHz Stagger-Tuned Power Amplifier With 13.5-dBm P sat in 130-nm SiGe
3. A D-band power amplifier with 15 dBm psat in $0.13~\mu\text{m}$ SiGe BiCMOS technology;aksoyak;Proc IEEE Meeting Silicon Monolithic Integr Circuits RF Syst (SiRF),2022
4. A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly-Compact 20-mW, 270–320-GHz InGaAs mHEMT Power Amplifier MMIC;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
2. On-Wafer 3rd-Order Intermodulation Distortion Measurement of a D-Band Circuit;The Journal of Korean Institute of Electromagnetic Engineering and Science;2024-04
3. A SiGe-Based Quadrature D-Band Up-Converter with High Output Power;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21
4. A 4.5 dBm SiGe Doubler-Amplifier Chain Covering the Entire D-Band;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21
5. Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2023-06