Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D 2 and N 2 Annealing-Reference-Cited by-同舟云学术

Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D ₂ and N ₂ Annealing

Published:2023-06 Issue:2 Volume:23 Page:276-280
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Ku Ja-Yun¹,Lee Khwang-Sun¹^ORCID,Jung Dae-Han¹^ORCID,Wang Dong-Hyun¹^ORCID,Oh Seyoung¹,Lee Kiyoung²,Cho Byungjin¹,Bae Hagyoul³^ORCID,Park Jun-Young¹^ORCID

Affiliation:

1. School of Electronics Engineering, Chungbuk National University, Cheongju, Republic of Korea

2. Chemical Engineering and Materials Science Department, Hongik University, Seoul, Republic of Korea

3. Department of Electronic Engineering, Jeonbuk National University, Jeonju, Republic of Korea

Funder

National Research Foundation of Korea (NRF) Grant funded by the Korea Government

Nano-Material Technology Development Program through the National Research Foundation (NRF) of Korea funded by the Ministry of Science, ICT, and Future Planning

research funds for newly appointed professors of Jeonbuk National University in 2022

Hongik University New Faculty Research Support Fund

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/10145596/10109874.pdf?arnumber=10109874

Reference27 articles.

1. Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric

2. Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

3. Low-temperature deuterium annealing to improve performance and reliability in a MOSFET

4. Effects of deuterium anneal on MOSFETs with HfO2 gate dielectrics

5. Improvement of FinFET Electrical Characteristics by Hydrogen Annealing

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