Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors-Reference-Cited by-同舟云学术

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Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

Published:2000-05 Issue:5 Volume:21 Page:221-223
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jinju Lee ,Kangguo Cheng ,Zhi Chen ,Hess K.,Lyding J.W.,Young-Kwang Kim ,Hyui-Seung Lee ,Young-Wug Kim ,Kwang-Pyuk Suh

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/18182/00841302.pdf?arnumber=841302

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature Deuterium Annealing for High-Performance and Reliable Poly-Si Channel Thin-Film Transistors;IEEE Transactions on Electron Devices;2024-02

2. Low-Temperature Deuterium Annealing for the Recovery of Ionizing Radiation-Induced Damage in MOSFETs;IEEE Transactions on Device and Materials Reliability;2023-06

3. Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D ₂ and N ₂ Annealing;IEEE Transactions on Device and Materials Reliability;2023-06

4. Improvement of Device Reliability and Variability Using High Pressure Deuterium Annealing;Transactions on Electrical and Electronic Materials;2022-11-04

5. Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET;Scientific Reports;2022-11-02

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