Author:
Shin Hyun-Jin,Eadi Sunil Babu,An Yeong-Jin,Ryu Tae-Gyu,Kim Do-woo,Lee Hi-Deok,Kwon Hyuk-Min
Abstract
AbstractTunneling field-effect transistors (TFETs) are a promising candidate for the next generation of low-power devices, but their performance is very sensitive to traps near the tunneling junction. This study investigated the effects of high-pressure deuterium (D2) annealing and hydrogen (H2) annealing on the electrical performance and low-frequency noise (LFN) of a fully depleted silicon-on-insulator p-type TFET. Without high-pressure annealing, the typical noise power spectral density exhibited two Lorentzian spectra that were affected by fast and slow trap sites. With high-pressure annealing, the interface trap density related to fast trap sites was reduced. The passivation of traps near the tunneling junction indicates that high-pressure H2 and D2 annealing improves the electrical performance and LFN properties, and it may become a significant and necessary step for realizing integrated TFET technology in the future.
Funder
Ministry of Trade, Industry and Energy
Ministry of Science and ICT, South Korea
Publisher
Springer Science and Business Media LLC