Effects of deuterium anneal on MOSFETs with HfO2 gate dielectrics-Reference-Cited by-同舟云学术

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Effects of deuterium anneal on MOSFETs with HfO2 gate dielectrics

Published:2003-03 Issue:3 Volume:24 Page:144-146
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Rino Choi ,Onishi K.,Chang Seok Kang ,Hag-Ju Cho ,Kim Y.H.,Krishnan S.,Akbar M.S.,Lee J.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/27076/01202508.pdf?arnumber=1202508

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing;Solid-State Electronics;2024-03

2. Effect of high temperature annealing on cryogenic transport properties of silicon MOSFETs with a thin SiO₂/HfO₂ stacked dielectric;Semiconductor Science and Technology;2023-09-14

3. Lowering of Schottky Barrier Height in a Vertical Pillar MOSFET by Deuterium Annealing;IEEE Electron Device Letters;2023-07

4. Low-Temperature Deuterium Annealing for the Recovery of Ionizing Radiation-Induced Damage in MOSFETs;IEEE Transactions on Device and Materials Reliability;2023-06

5. Comprehensive Study on Trap-Induced Bias Instability via High-Pressure D ₂ and N ₂ Annealing;IEEE Transactions on Device and Materials Reliability;2023-06

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