Low-temperature deuterium annealing for improved electrical characteristics of SONOS-Reference-Cited by-同舟云学术

Low-temperature deuterium annealing for improved electrical characteristics of SONOS

Published:2023-12 Issue: Volume:151 Page:115276
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Jung Dae-Han,Yoon Sung-Su,Wang Dong-Hyun,Ku Ja-Yun,Kil Tae-Hyun,Kim Dong-Ho,Park Jun-Young

Funder

European Defence Agency

Ministry of Education

National Research Foundation of Korea

IC Design Education Center

Samsung

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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4. Investigation of mechanical stability during electrothermal annealing in a 3D NAND flash memory string;Kim;J. Semicond. Technol. Sci.,2022

5. Demonstration of multi-layered macaroni filler for back-biasing-assisted erasing configuration in 3D V-NAND;Jung;J. Semicond. Technol. Sci.,2021

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1. Durability of Low-Temperature Deuterium Annealing Against Ionizing Radiation in MOSFETs;IEEE Transactions on Electron Devices;2024-09