An Analytical Programming Model for the Drain-Coupling Source-Side Injection Split Gate Flash EEPROM-Reference-Cited by-同舟云学术

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An Analytical Programming Model for the Drain-Coupling Source-Side Injection Split Gate Flash EEPROM

Published:2005-03 Issue:3 Volume:52 Page:385-391
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Y.-H.,Wu M.-C.,Lin C.-J.,Chu W.-T.,Lin Y.-T.,Wang C.S.,Cheng K.-Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/30406/01397988.pdf?arnumber=1397988

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology;Microelectronics Reliability;2017-12

2. On-Chip Non-volatile Memory for Ultra-Low Power Operation;Enabling the Internet of Things;2017

3. A novel high-density embedded AND-type split gate flash memory;Japanese Journal of Applied Physics;2014-01-01

4. A novel method to improve cell endurance window in source-side injection split gate flash memory;Microelectronics Reliability;2012-06

5. Non-linear coupling voltage of split-gate flash memory cells with additional top coupling gate;IET Circuits, Devices & Systems;2012

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