A novel high-density embedded AND-type split gate flash memory-Reference-Cited by-同舟云学术

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A novel high-density embedded AND-type split gate flash memory

Published:2014-01-01 Issue:4S Volume:53 Page:04ED08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shen Wen Chao,Wang Ching-Hua,Pan Hsin-Wei,Yang Zhi-Sung,Chih Yue Der,Lee Te-Liang,Lien Chiu-Wang,King Ya-Chin,Lin Chrong Jung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference31 articles.

1. Introduction to flash memory

2. Survey on flash technology with specific attention to the critical process parameters related to manufacturing

3. An analytical model for the optimization of source-side injection flash EEPROM devices

4. A novel high density contactless flash memory array using split-gate sources-side-injection cell for 5 V-only applications

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and optimization of aggressively scaled Dual-Bit/Cell Split-Gate Floating-Gate flash memory cell in 55-nm node technology;Solid-State Electronics;2022-08

2. A Twin Bit AND-Type Multiple-Time-Programming Memory Cell by Nano-scaled High-κ Metal Gate Process;2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA);2021-04-19

3. Device scaling considerations for sub-90-nm 2-bit/cell split-gate flash memory cell;Solid-State Electronics;2019-02

4. A Highly Reliable 2-Bits/Cell Split-Gate Flash Memory Cell With a New Program-Disturbs Immune Array Configuration;IEEE Transactions on Electron Devices;2014-07

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