Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology-Reference-Cited by-同舟云学术

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Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology

Published:2017-12 Issue: Volume:79 Page:281-287
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Torrente Giulio,Coignus Jean,Vernhet Alexandre,Ogier Jean-Luc,Roy David,Ghibaudo Gérard

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Advancement in Charge-Trap Flash Memory Technology;Tehrani,2013

2. A quantitative study of endurance characteristics and its temperature dependence of embedded flash memories with 2T-FNFN NOR device architecture;Guoqiao;IEEE Trans. Device Mater. Reliab.,2007

3. Tail bit implications in advanced 2 transistors-Flash memory device reliability;Scarpa;Microelectron. Eng.,2001

4. Charge-trapping-type Flash memory device with stacked high-k charge-trapping layer;Ping-Hung;IEEE Electron Device Lett.,2009

5. SONOS-type flash memory using an HfO2 as a charge trapping layer deposited by the sol-gel spin-coating method;Hsin-Chiang;IEEE Electron Device Lett.,2006

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1. Experimental fabrication of an ESF3 floating gate flash cell in an FD-SOI process;ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC);2022-09-19

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