A Comparative Performance Analysis of 6T & 9T SRAM Integrated Circuits: SOI vs. Bulk
Author:
Affiliation:
1. Department of Electrical and Control Engineering, École Supérieure d’Électronique de l’Ouest, RF-EMC Research Group, Angers, France
Funder
European Union’s Horizon 2020 Research and Innovation Programme through the Marie Sklodowska-Curie
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/8566057/9780465/09747925.pdf?arnumber=9747925
Reference25 articles.
1. Comparative Study of 7T, 8T, 9T and 10T SRAM with Conventional 6T SRAM Cell Using 180 nm Technology
2. A comparative study of 6T, 8T and 9T decanano SRAM cell
3. Simulation and stability analysis of 6T and 9T SRAM cell in 45 nm era
4. http://ijettjournal.org/archive/ijett-v67i4p219
5. Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier
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