Funder
Ministry of Science and Technology, Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Cited by
8 articles.
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1. A novel design of collapsed supply and boosted bit-line swing write driver for fast write access 9T SRAM;Engineering Research Express;2024-07-11
2. A 2.5 GHz, 1-Kb SRAM with Auxiliary Circuit Assisted Sense Amplifier in 65-nm CMOS Process;2023 36th International Conference on VLSI Design and 2023 22nd International Conference on Embedded Systems (VLSID);2023-01
3. Ultra low power offering 14 nm bulk double gate FinFET based SRAM cells;Sustainable Computing: Informatics and Systems;2022-09
4. A Comparative Performance Analysis of 6T & 9T SRAM Integrated Circuits: SOI vs. Bulk;IEEE Letters on Electromagnetic Compatibility Practice and Applications;2022-06
5. Low Power, High Performance PMOS Biased Sense Amplifier;2021 12th International Symposium on Advanced Topics in Electrical Engineering (ATEE);2021-03-25