Simulation and stability analysis of 6T and 9T SRAM cell in 45 nm era-Reference-Cited by-同舟云学术

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Simulation and stability analysis of 6T and 9T SRAM cell in 45 nm era

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 2nd International Conference on Power, Control and Embedded Systems
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Author:

Akashe Shyam,Tiwari Nitesh Kumar,Sharma Rajeev

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6504609/6508026/06508061.pdf?arnumber=6508061

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Analysis of CMOS SRAM 6T, 7T and 9T Cells using Cadence at 180nm Technology;2024 3rd International Conference for Innovation in Technology (INOCON);2024-03-01

2. Extensive Investigation on Even-Transistor-Configuration CMOS-based SRAM;Nanoscale Field Effect Transistors: Emerging Applications;2023-12-19

3. A Comparative Performance Analysis of 6T & 9T SRAM Integrated Circuits: SOI vs. Bulk;IEEE Letters on Electromagnetic Compatibility Practice and Applications;2022-06

4. Performance evaluation of double gate tunnel FET based chain of inverters and 6-T SRAM cell;Engineering Research Express;2019-12-18

5. Comparative Study of 7T, 8T, 9T and 10T SRAM with Conventional 6T SRAM Cell Using 180 nm Technology;Advanced Computing and Communication Technologies;2016

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