Characterization and Test of Intermittent Over RESET in RRAMs
Author:
Affiliation:
1. TU Delft,Delft,The Netherlands
2. Aix-Marseille University,Marseille,France
3. RWTH Aachen University,IDS,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10317938/10317940/10317990.pdf?arnumber=10317990
Reference23 articles.
1. Improvement of sensing margin and reset switching fail of RRAM
2. STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance
3. Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories
4. Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability
5. Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfO x RRAM devices
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