Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfO x RRAM devices-Reference-Cited by-同舟云学术

Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfO x RRAM devices

Published:2013-09 Issue: Volume:231 Page:563-566
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Zhong Chia-Wen,Tzeng Wen-Hsien,Liu Kou-Chen,Lin Horng-Chih,Chang Kow-Ming,Chan Yi-Chun,Kuo Chun-Chih,Chen Pang-Shiu,Lee Heng-Yuan,Chen Frederick,Tsai Ming-Jinn

Funder

Nanya Technology Corporation

Electronics and Optoelectronics Research Laboratory of Industrial Technology Research Institute

National Sciences Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference14 articles.

1. Moore's Law Forever?

2. TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching

3. Switching characteristics of Cu2O metal-insulator-metal resistive memory

4. Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

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