Improvement of sensing margin and reset switching fail of RRAM-Reference-Cited by-同舟云学术

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Improvement of sensing margin and reset switching fail of RRAM

Published:2019-06 Issue: Volume:156 Page:87-91
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Park Woo Young,Ju Wonki,Ko Young Seok,Kim Soo Gil,Ha Tae Jung,Lee Jae Yeon,Park Yong Taek,Kim Kyung Wan,Lee Jong Chul,Lee Jong Ho,Moon Joo Young,Lee Bo Mi,Gyun Byung Gu,Lee Byoung-Ki,Kim Jin Kook

Funder

25th Korean Conference on Semiconductor

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Nanoionics-based resistive switching memories

2. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of MAC Accuracy using Oxygen Diffusion Barriers in Resistive Synaptic Cell Arrays;2024 IEEE International Memory Workshop (IMW);2024-05-12

2. Characterization and Test of Intermittent Over RESET in RRAMs;2023 IEEE 32nd Asian Test Symposium (ATS);2023-10-14

3. Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer;Micromachines;2020-09-29

4. Enhancing Short-Term Plasticity by Inserting a Thin TiO2 Layer in WOx-Based Resistive Switching Memory;Coatings;2020-09-22

5. Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature;Solid-State Electronics;2020-06

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