Author:
Lin Hsin-Chang,Rebeiz Gabriel M.
Cited by
12 articles.
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1. A 4.5 dBm SiGe Doubler-Amplifier Chain Covering the Entire D-Band;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21
2. A 140–210-GHz InP Frequency Doubler Using a Low-Loss Low-Imbalance Marchand Balun;IEEE Microwave and Wireless Technology Letters;2024-01
3. A D-Band Frequency Doubler with Gm-Boosting Technique in 28-nm CMOS;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
4. A 120-GHz Class-F Frequency Doubler With 7.8-dBm POUT in 55-nm Bulk CMOS;IEEE Journal of Solid-State Circuits;2023-08
5. A D-Band 16-Element Phased-Array Transceiver in 55-nm BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2023-02