A 120-GHz Class-F Frequency Doubler With 7.8-dBm P<sub>OUT</sub> in 55-nm Bulk CMOS-Reference-Cited by-同舟云学术

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A 120-GHz Class-F Frequency Doubler With 7.8-dBm P_OUT in 55-nm Bulk CMOS

Published:2023-08 Issue:8 Volume:58 Page:2173-2188
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Yang Zhen¹^ORCID,Ma Kaixue²^ORCID,Meng Fanyi²^ORCID,Liu Bing²

Affiliation:

1. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, China

2. School of Microelectronics and Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin University, Tianjin, China

Funder

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/10192489/10070744.pdf?arnumber=10070744

Reference59 articles.

1. Design of 94-GHz Highly Efficient Frequency Octupler Using 47-GHz Current-Reusing Class-C Frequency Quadrupler

2. A high suppression frequency tripler for 60-GHz transceivers

3. A 170-GHz Fully Integrated Single-Chip FMCW Imaging Radar with 3-D Imaging Capability

4. W-Band SiGe Frequency Doubler With Optimum Harmonic Termination for 14% Efficiency

5. A 134 GHz ${+}4$ dBm Frequency Doubler at $f_{\max}$ in 130 nm CMOS

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 170-GHz Cascode Frequency Doubler With 15.6-dBm P _OUT in 130-nm SiGe BiCMOS;IEEE Transactions on Terahertz Science and Technology;2024-09

2. 110 - 170 GHz 25% Duty-cycle Gilbert-cell Frequency Doubler with 6.5 dBm Peak Output Power in BiCMOS 55 nm Technology;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

3. A 4.5 dBm SiGe Doubler-Amplifier Chain Covering the Entire D-Band;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21

4. A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs;IEEE Journal of Microwaves;2024-01

5. Developments and challenges of mm-Wave integrated circuits on silicon;SCIENTIA SINICA Informationis;2024-01-01

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