A D-Band Frequency Doubler with Gm-Boosting Technique in 28-nm CMOS
Author:
Affiliation:
1. National Taiwan University,Department of Electrical Engineering and Graduate Institute of Communication Engineering,Taiwan
2. Institute of Astronomy and Astrophysics, Academia Sinica,Taiwan
Funder
Taiwan Semiconductor Manufacturing Company
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288774.pdf?arnumber=10288774
Reference8 articles.
1. An integrated 122GHz differential frequency doubler with 37GHz bandwidth in 130 nm SiGe BiCMOS technology
2. A compact 105–130 GHz push-push doubler, with 4dBm Psat and 18% efficiency in 28nm CMOS
3. A 40-GHz Low-Noise Amplifier With a Positive-Feedback Network in 0.18-$\mu{\hbox{m}}$ CMOS
4. A High-Efficiency D-Band Frequency Doubler in 22-nm FDSOI CMOS
5. A 135–160 GHz balanced frequency doubler in 45 nm CMOS with 3.5 dBm peak power
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 114–126-GHz Frequency Doubler With >10 dBm Output Power and >12% Efficiency in 45 nm RFSOI;IEEE Microwave and Wireless Technology Letters;2024-09
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