A High-Efficiency D-Band Frequency Doubler in 22-nm FDSOI CMOS-Reference-Cited by-同舟云学术

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A High-Efficiency D-Band Frequency Doubler in 22-nm FDSOI CMOS

Published:2022-09-26 Issue: Volume: Page:
ISSN:
Container-title:2022 17th European Microwave Integrated Circuits Conference (EuMIC)
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Author:

Mock Matthias¹,Aksoyak Ibrahim Kagan¹,Ulusoy Ahmet Cagri¹

Affiliation:

1. Institute of Radio Frequency Engineering and Electronics (IHE), Karlsruhe Institute of Technology (KIT),Karlsruhe,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9923413/9922957/09923533.pdf?arnumber=9923533

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 114–126-GHz Frequency Doubler With >10 dBm Output Power and >12% Efficiency in 45 nm RFSOI;IEEE Microwave and Wireless Technology Letters;2024-09

2. A 170-GHz Cascode Frequency Doubler With 15.6-dBm P _OUT in 130-nm SiGe BiCMOS;IEEE Transactions on Terahertz Science and Technology;2024-09

3. 110 - 170 GHz 25% Duty-cycle Gilbert-cell Frequency Doubler with 6.5 dBm Peak Output Power in BiCMOS 55 nm Technology;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

4. A 4.5 dBm SiGe Doubler-Amplifier Chain Covering the Entire D-Band;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21

5. A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs;IEEE Journal of Microwaves;2024-01

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