110 - 170 GHz 25% Duty-cycle Gilbert-cell Frequency Doubler with 6.5 dBm Peak Output Power in BiCMOS 55 nm Technology
Author:
Affiliation:
1. University of Pavia,Computer and Biomedical Engineering,Department of Electrical,Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10599936/10599927/10600002.pdf?arnumber=10600002
Reference10 articles.
1. High Gain 130-GHz Frequency Doubler With Colpitts Output Buffer Delivering P out up to 8 dBm with 6% PAE in 55-nm SiGe BiCMOS
2. A highly-efficient 138–170 GHz SiGe HBT frequency doubler for power-constrained applications
3. Triaxial Balun With Inherent Harmonic Reflection for Millimeter-Wave Frequency Doublers
4. A Frequency Doubler/Modulator With 4.5 dBm Output Power at 170 GHz Using SiGe HBTs
5. A High-Efficiency D-Band Frequency Doubler in 22-nm FDSOI CMOS
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