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High Gain 130-GHz Frequency Doubler With Colpitts Output Buffer Delivering P out up to 8 dBm with 6% PAE in 55-nm SiGe BiCMOS

  • Published:2021 Issue: Volume:4 Page:36-39
  • ISSN:2573-9603
  • Container-title:IEEE Solid-State Circuits Letters
  • language:
  • Short-container-title:IEEE Solid-State Circuits Lett.

Author:

Pirbazari Mahmoud M.ORCID,Mazzanti AndreaORCID

Funder

Commission of the European Union within the framework of the H2020 DREAM Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 170-GHz Cascode Frequency Doubler With 15.6-dBm P OUT in 130-nm SiGe BiCMOS;IEEE Transactions on Terahertz Science and Technology;2024-09

2. 110 - 170 GHz 25% Duty-cycle Gilbert-cell Frequency Doubler with 6.5 dBm Peak Output Power in BiCMOS 55 nm Technology;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

3. A 4.5 dBm SiGe Doubler-Amplifier Chain Covering the Entire D-Band;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21

4. A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs;IEEE Journal of Microwaves;2024-01

5. A 61-187.2-GHz Traveling Wave Push-Push Frequency Doubler in a 130 nm SiGe:C BiCMOS Technology With 101.7% Fractional Bandwidth;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
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