Si-CMOS
Author:
Publisher
Springer International Publishing
Link
https://link.springer.com/content/pdf/10.1007/978-3-030-73738-2_21
Reference38 articles.
1. Heinemann, B., Rücker, H., Barth, R., Bärwolf, F., Drews, J., Fischer, G. G., Fox, A., Fursenko, O., Grabolla, T., Herzel, F., Katzer, J., Korn, J. Krüger, A., Kulse, P., Lenke, T., Lisker, M., Marschmeyer, S., Scheit, A., Schmidt, D. J., …, Wolansky, D. (2016). SiGe HBT with fx/fmax of 505 GHz/720 GHz. In Proc. IEEE Int. Electron Devices Meeting (IEDM) (pp. 3.1.1–3.1.4).
2. Deal, W. R. (2014). InP HEMT for sub-millimeter wave space applications: Status and challenges. In Proc. and Terahertz waves (IRMMW-THz) 2014 39th Int. Conf. Infrared, Millimeter (pp. 1–3).
3. Bameri, H., & Momeni, O. (2017). A high-gain mm-wave amplifier design: An analytical approach to power gain boosting. IEEE Journal of Solid-State Circuits, 52(2), 357–370.
4. Tokgoz, K. K., Abdo, I., Fujimura, T., Pang, J., Kawano, Y., Iwai, T., et al. (2019). A 273–301-GHz amplifier with 21-dB peak gain in 65-nm standard bulk CMOS. IEEE Microwave and Wireless Components Letters, 29(5), 342–344.
5. Han, R., & Afshari, E. (2013). A CMOS high-power broadband 260-GHz radiator array for spectroscopy,” IEEE Journal of Solid-State Circuits, 48(12), 3090–3104.
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