Superior Breakdown, Retention, and TDDB Lifetime for Ferroelectric Engineered Charge Trap Gate E-mode GaN MIS-HEMT
Author:
Affiliation:
1. National Yang Ming Chiao Tung University,Hsinchu,Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019471.pdf?arnumber=10019471
Reference13 articles.
1. Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films
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2. The Effect of Fluorine Doping in the Charge Trapping Layer on Device Characteristics and Reliability of E-Mode GaN MIS-HEMTs;IEEE Transactions on Electron Devices;2024-06
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