The Effect of Fluorine Doping in the Charge Trapping Layer on Device Characteristics and Reliability of E-Mode GaN MIS-HEMTs-Reference-Cited by-同舟云学术

The Effect of Fluorine Doping in the Charge Trapping Layer on Device Characteristics and Reliability of E-Mode GaN MIS-HEMTs

Published:2024-06 Issue:6 Volume:71 Page:3603-3608
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Tsung-Ying¹^ORCID,Wu Sih-Rong¹,Wu Jui-Sheng²^ORCID,Liang Yan-Kui¹^ORCID,Kuo Mei-Yan²,Iwai Hiroshi¹^ORCID,Chang Edward-Yi³^ORCID

Affiliation:

1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University (NYCU), Hsinchu, Taiwan

2. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University (NYCU), Hsinchu, Taiwan

3. Department of Materials Science and Engineering, International College of Semiconductor Technology, National Yang Ming Chiao Tung University (NYCU), Hsinchu, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10538150/10529963.pdf?arnumber=10529963

Reference28 articles.

1. High Vth enhancement mode GaN power devices with high ID, max using hybrid ferroelectric charge trap gate stack

2. High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

3. Superior Breakdown, Retention, and TDDB Lifetime for Ferroelectric Engineered Charge Trap Gate E-mode GaN MIS-HEMT

4. AlGaN/GaN Enhancement-Mode MOSHEMTs Utilizing Hybrid Gate-Recessed Structure and Ferroelectric Charge Trapping/Storage Stacked LiNbO3/HfO2/Al2O3 Structure

5. Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrOₓ Charge Trapping Layer