A 140 dB Single-Exposure Dynamic-Range CMOS Image Sensor with In-Pixel DRAM Capacitor-Reference-Cited by-同舟云学术

A 140 dB Single-Exposure Dynamic-Range CMOS Image Sensor with In-Pixel DRAM Capacitor

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Oh Youngsun¹,Lim Jungwook¹,Park Soeun¹,Yoo Dongsuk¹,Lim Moosup¹,Park Joongseok¹,Kim Seojoo¹,Jung Minwook¹,Kim Sungkwan¹,Lee Junetaeg¹,Baek In-Gyu¹,Ryu Kwangyul¹,Kim Kyungmin¹,Jang Youngtae¹,Keel Min-Sun¹,Bae Gyujin¹,Yoo Seunghun¹,Jeong Youngkyun¹,Kim Bumsuk¹,Ahn Jungchak¹,Lee Haechang¹,Yim Joonseo¹

Affiliation:

1. Samsung Electronics Co., Ltd.,Yongin-city,Gyeonggi-do,Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019558.pdf?arnumber=10019558

Reference8 articles.

1. Automotive 8.3 MP CMOS Image Sensor with 150 dB Dynamic Range and Light Flicker Mitigation

2. 3.0um Backside Illuminated, Lateral Overflow, High Dynamic Range, LED Flicker Mitigation Image Sensor;oh;Int Image Sensor Workshop,2019

3. 5.7 A 132dB Single-Exposure-Dynamic-Range CMOS Image Sensor with High Temperature Tolerance

4. A 0.68e-rms Random-Noise 121dB Dynamic-Range Sub-pixel architecture CMOS Image Sensor with LED Flicker Mitigation

5. 5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

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