5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology-Reference-Cited by-同舟云学术

5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

Published:2020-02 Issue: Volume: Page:
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Container-title:2020 IEEE International Solid- State Circuits Conference - (ISSCC)
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Author:

Lee Jae-Kyu,Kim Seung Sik,Baek In-Gyu,Shim Heesung,Kim Taehoon,Kim Taehyoung,Kyoung Jungchan,Im Dongmo,Choi Jinyong,Cho KeunYeong,Kim Daehoon,Lim Haemin,Seo Min-Woong,Kim JuYoung,Kwon Doowon,Song Jiyoun,Kim Jiyoon,Jang Minho,Moon Joosung,Kim HyunChul,Chang Chong Kwang,Kim JinGyun,Koh Kyoungmin,Lim HanJin,Ahn JungChak,Hong Hyeongsun,Lee Kyupil,Kang Ho-Kyu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9046640/9062887/09063092.pdf?arnumber=9063092

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