Bandwidth enhancement in GeSn-on-Si avalanche photodiodes with a 60 GHz gain-bandwidth-product-Reference-Cited by-同舟云学术

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Bandwidth enhancement in GeSn-on-Si avalanche photodiodes with a 60 GHz gain-bandwidth-product

Published:2024-04-15 Issue: Volume: Page:1-2
ISSN:
Container-title:2024 IEEE Silicon Photonics Conference (SiPhotonics)
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Author:

Wanitzek M.¹,Schwarz D.¹,Schulze J.²,Oehme M.¹

Affiliation:

1. University of Stuttgart,Institute of Semiconductor Engineering,Stuttgart,Germany,70569

2. Friedrich-Alexander-University Erlangen,Electron Devices,Erlangen,Germany,91058

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10543257/10543280/10543351.pdf?arnumber=10543351

Reference6 articles.

1. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product

2. GeSn on Si avalanche photodiodes for short wave infrared detection;Zhang

3. Germanium-Tin on Si Avalanche Photodiode: Device Design and Technology Demonstration

4. GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection

5. NDR-effect vertical-illumination-type Ge-on-Si avalanche photodetector

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