GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection-Reference-Cited by-同舟云学术

GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection

Published:2022-09-19 Issue: Volume: Page:
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Container-title:ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)
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Author:

Wanitzek Maurice¹,Oehme Michael¹,Spieth Christian¹,Schwarz Daniel¹,Seidel Lukas¹,Schulze Jorg²

Affiliation:

1. Institute of Semiconductor Engineering, University of Stuttgart,Stuttgart,Germany

2. Friedrich-Alexander-University, Erlangen-Nuremberg,Chair of Electron Devices,Erlangen,Germany

Funder

Austrian Research Promotion Agency

Business Finland

Federal Ministry of Education and Research

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9911257/9911222/09911363.pdf?arnumber=9911363

Reference11 articles.

1. Ge-on-Si Avalanche Photodiodes for LIDAR Applications

2. Interband Transitions inSnxGe1−xAlloys

3. GeSn on Si avalanche photodiodes for short wave infrared detection;zhang;Proc SPIE 10846 Optical Sensing and Imaging Technologies and Applications,0

4. Backside Illuminated “Ge-on-Si” NIR Camera

5. Germanium tin: silicon photonics toward the mid-infrared [Invited]

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