Germanium-Tin on Si Avalanche Photodiode: Device Design and Technology Demonstration-Reference-Cited by-同舟云学术

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Germanium-Tin on Si Avalanche Photodiode: Device Design and Technology Demonstration

Published:2015-01 Issue:1 Volume:62 Page:128-135
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Dong Yuan,Liang Gengchiau,Yeo Yee-Chia,Wang Wei,Xu Xin,Gong Xiao,Lei Dian,Zhou Qian,Xu Zhe,Loke Wan Khai,Yoon Soon-Fatt

Funder

National Research Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6994894/06971107.pdf?arnumber=6971107

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling and Design of GeSn Avalanche Photodiodes With High Tin Content for Applications at 3.3 μm;IEEE Journal of Selected Topics in Quantum Electronics;2025-01

2. Design of Mid-Infrared Ge_1-xSn_x/Ge Heterojunction Photodetectors on GeSnOI Platform With a Bandwidth Exceeding 100 GHz;IEEE Journal of Selected Topics in Quantum Electronics;2025-01

3. Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche Photodetectors;IEEE Photonics Journal;2024-06

4. Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection;Materials Science in Semiconductor Processing;2024-06

5. Bandwidth enhancement in GeSn-on-Si avalanche photodiodes with a 60 GHz gain-bandwidth-product;2024 IEEE Silicon Photonics Conference (SiPhotonics);2024-04-15

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