NDR-effect vertical-illumination-type Ge-on-Si avalanche photodetector-Reference-Cited by-同舟云学术

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NDR-effect vertical-illumination-type Ge-on-Si avalanche photodetector

Published:2018-11-12 Issue:22 Volume:43 Page:5583
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Kim Gyungock,Kim Sanghoon,Kim Sun Ae,Oh Jin Hyuk,Jang Ki-Seok

Funder

National Council of Science and Technology

Ministry of Science and Information and Communications Technologies (ICT)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference31 articles.

1. A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

2. The optical age of silicon

3. CMOS Photonics for High-Speed Interconnects

4. Device Requirements for Optical Interconnects to Silicon Chips

5. Germanium Photodetectors for Photonics on CMOS

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Normal-Incidence Germanium Photodetectors Integrated with Polymer Microlenses for Optical Fiber Communication Applications;Sensors;2024-06-29

2. Surface-normal illuminated pseudo-planar Ge-on-Si avalanche photodiodes with high gain and low noise;Optics Express;2024-05-13

3. Bandwidth enhancement in GeSn-on-Si avalanche photodiodes with a 60 GHz gain-bandwidth-product;2024 IEEE Silicon Photonics Conference (SiPhotonics);2024-04-15

4. Avalanche photodiode with ultrahigh gain–bandwidth product of 1,033 GHz;Nature Photonics;2024-04-09

5. Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector–Part II: Large Bias Operation;IEEE Access;2024

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