Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector–Part II: Large Bias Operation-Reference-Cited by-同舟云学术

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Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector–Part II: Large Bias Operation

Published:2024 Issue: Volume:12 Page:119238-119245
ISSN:2169-3536
Container-title:IEEE Access
language:
Short-container-title:IEEE Access

Author:

Chen Yanning¹^ORCID,Liu Fang²,Shao Yali²,Liang Yingzong²,Du Sichao³^ORCID,Yin Wen-Yan³^ORCID

Affiliation:

1. College of Integrated Circuits, Zhejiang University, Zhejiang, China

2. Beijing Smart-Chip Microelectronics Technology Company Ltd., Beijing, China

3. Innovative Institute of Electromagnetic Information and Electronic Engineering, College of Information and Electronic Engineering, Zhejiang University, Hangzhou, China

Funder

National Natural Science Foundation of China

Laboratory Specialized Scientific Research Projects of Beijing Smart-Chip Microelectronics Technology Company Ltd.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/6287639/10380310/10643965.pdf?arnumber=10643965

Reference31 articles.

1. Single-photon avalanche diode imagers in biophotonics: review and outlook

2. Silicon/2D-material photodetectors: from near-infrared to mid-infrared

3. A linear array of avalanche MIS photodetectors

4. High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions

5. Ultrasensitive photodetectors based on monolayer MoS2

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