High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions-Reference-Cited by-同舟云学术

High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions

Published:2018-10-15 Issue:1 Volume:6 Page:107-115
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Riazimehr Sarah¹^ORCID,Kataria Satender¹^ORCID,Gonzalez-Medina Jose M.²,Wagner Stefan³,Shaygan Mehrdad³,Suckow Stephan³^ORCID,Ruiz Francisco G.²,Engström Olof³,Godoy Andres²^ORCID,Lemme Max C.¹³^ORCID

Affiliation:

1. Chair of Electronic Devices, Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany

2. Dpto. de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Av. Fuentenueva S/N, 18071 Granada, Spain

3. AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Str. 25, 52074 Aachen, Germany

Funder

Deutsche Forschungsgemeinschaft

Universidad de Granada

H2020 Future and Emerging Technologies

Ministerio de Educaci?n, Cultura y Deporte

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

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