Direct Fabrication of Te-Doped Black Si with an Enhanced Photoelectric Performance by Femtosecond Laser Irradiation under Water-Reference-Cited by-同舟云学术

Direct Fabrication of Te-Doped Black Si with an Enhanced Photoelectric Performance by Femtosecond Laser Irradiation under Water

Published:2024-01-03 Issue:2 Volume:16 Page:2921-2931
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Xuan¹,Du Wenhan¹,JJ Nivas Jijil¹²,Zhao Bing¹,Zhao Xiaona¹^ORCID,Amoruso Salvatore²^ORCID

Affiliation:

1. School of Remote Sensing and Information Engineering, Wuhan University, Wuhan 430072, China

2. Dipartimento di Fisica Ettore Pancini and CNR-SPIN, Università degli Studi di Napoli Federico II, Complesso Universitario di Monte S. Angelo, Via Cintia, Napoli I-80126, Italy

Funder

National Key Research and Development Program of China

China Postdoctoral Science Foundation

Universit? degli Studi di Napoli Federico II

Wuhan University

National Natural Science Foundation of China

2022 Wuhan University Sino-foreign Joint Scientific Research Platform Seed Fund Support Plan

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c15234

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3. Graphene–aluminum nitride NEMS resonant infrared detector

4. Neural Network Based Brain Tumor Detection Using Wireless Infrared Imaging Sensor

5. Facial Skin Temperature and Discomfort When Wearing Protective Face Masks: Thermal Infrared Imaging Evaluation and Hands Moving the Mask