Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product-Reference-Cited by-同舟云学术

Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product

Published:2008-12-07 Issue:1 Volume:3 Page:59-63
ISSN:1749-4885
Container-title:Nature Photonics
language:en
Short-container-title:Nature Photon

Author:

Kang Yimin,Liu Han-Din,Morse Mike,Paniccia Mario J.,Zadka Moshe,Litski Stas,Sarid Gadi,Pauchard Alexandre,Kuo Ying-Hao,Chen Hui-Wen,Zaoui Wissem Sfar,Bowers John E.,Beling Andreas,McIntosh Dion C.,Zheng Xiaoguang,Campbell Joe C.

Publisher

Springer Science and Business Media LLC

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://www.nature.com/articles/nphoton.2008.247.pdf

Reference40 articles.

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3. Xu, Q., Manipatruni, S., Schmidt, B., Shakya, J. & Lipson, M. 12.5 Gbit s−1 carrier-injection-based silicon micro-ring silicon modulators. Opt. Express 15, 430–436 (2007).

4. Liu, A. et al. High-speed optical modulation based on carrier depletion in a silicon waveguide. Opt. Express 15, 660–668 (2007).

5. Huang, A. et al. A 10 Gb s−1 photonic modulator and WDM MUX/DEMUX integrated with electronics in 0.13 µm SOI CMOS. Proc. IEEE International Solid-State Circuits Conference, 922–929 (2006).

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