35 nm mHEMT Technology for THz and ultra low noise applications-Reference-Cited by-同舟云学术

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35 nm mHEMT Technology for THz and ultra low noise applications

Published:2013-05 Issue: Volume: Page:
ISSN:
Container-title:2013 International Conference on Indium Phosphide and Related Materials (IPRM)
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Author:

Leuther Arnulf¹,Tessmann Axel¹,Dammann Michael¹,Massler Hermann¹,Schlechtweg Michael¹,Ambacher Oliver¹

Affiliation:

1. Fraunhofer Institut for Applied Solid State Physics (IAF), Freiburg, Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6556710/6562559/06562647.pdf?arnumber=6562647

Cited by 44 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Key-Components for Ultra-low DC Power Gallium Nitride Low-Noise Receivers;Lecture Notes in Electrical Engineering;2023-11-29

2. Multi-Channel PA, LNA, and Switch MMICs for Beam-Switching Applications at 160 GHz, Based on an InGaAs mHEMT Technology;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

3. Ultra-Wideband mmW Digital Step Attenuator;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

4. InGaAs HEMT Technology for Submillimeter-Wave and Ultra-Wideband Monolithic Integrated Circuits;IGARSS 2023 - 2023 IEEE International Geoscience and Remote Sensing Symposium;2023-07-16

5. Millimeter-Wave LNA and PA MMICs With 10:1 and 4:1 Bandwidth in a 35-nm Gate-Length InGaAs mHEMT Technology;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

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