Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Low-Noise Power-Amplifier MMICs for the WR4.3 and WR3.4 Bands in a 35-nm Gate-Length InGaAs mHEMT Technology

Published:2024-06 Issue:6 Volume:34 Page:749-752
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Thome Fabian¹^ORCID,Leuther Arnulf¹^ORCID

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg im Breisgau, Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10551645/10505304.pdf?arnumber=10505304

Reference7 articles.

1. A 75–305-GHz Power Amplifier MMIC With 10–14.9-dBm Pout in a 35-nm InGaAs mHEMT Technology

2. Millimeter-Wave LNA and PA MMICs With 10:1 and 4:1 Bandwidth in a 35-nm Gate-Length InGaAs mHEMT Technology

3. 160-270-GHz InP HEMT MMIC Low-Noise Amplifiers

4. Full H-band LNA in 35 nm mHEMT technology with constant current bias control;Weber

5. 220–325-GHz 25-dB-Gain Differential Amplifier With High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP