Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories
Author:
Affiliation:
1. NaMLab gGmbH, Dresden, Germany
2. Center Nanoelectronic Technologies, Fraunhofer Institute for Photonic Microsystems, Dresden, Germany
3. GlobalFoundries Dresden Module One LLC and Company, Dresden, KG, Germany
Funder
European Regional Development Fund of the European Commission within the Scope of Technology Development
Free State of Saxony
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7548080/07519093.pdf?arnumber=7519093
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