Temperature analysis of lead zirconate titanate GAA-NCFET nanowire with interface trap charges
-
Published:2024-09
Issue:
Volume:307
Page:117523
-
ISSN:0921-5107
-
Container-title:Materials Science and Engineering: B
-
language:en
-
Short-container-title:Materials Science and Engineering: B
Author:
Kumar VivekORCID,
Maurya Ravindra Kumar,
Mummaneni Kavicharan
Reference34 articles.
1. Effects of the remnant polarization on the electrical characteristics of steeper sub-threshold swing Fe-GeFinFET;Maurya;Mater. Sci. Eng. B,2024
2. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm;Hisamoto;IEEE Trans. Electron Devices.,2000
3. Performance analysis of dual metal double gate tunnel-FETs for ultralow power applications;Gracia;Lect. Notes Electr. Eng.,2018
4. D. J. Moni, A. J. Anucia, D. Gracia, D. Nirmal, Performance Analysis of GaSb/InAs Tunnel FET for Low Power Applications, Proc. 4th Int. Conf. Devices, Circuits Syst. ICDCS 2018, 335–338, (2019). doi: 10.1109/ICDCSyst.2018.8605119.
5. Minimum-energy digital computing with steep subthreshold swing tunnel FETs;Truesdell;IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.,2020