The Challenges and Solutions of Cu/SiCN Wafer-to-Wafer Hybrid Bonding Scaling Down to 400nm Pitch-Reference-Cited by-同舟云学术

The Challenges and Solutions of Cu/SiCN Wafer-to-Wafer Hybrid Bonding Scaling Down to 400nm Pitch

Published:2023-12-09 Issue: Volume: Page:1-4
ISSN:
Container-title:2023 International Electron Devices Meeting (IEDM)
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Author:

Chew Soon-Aik¹,Zhang Boyao¹,Vanstreels Kris¹,Chery Emmanuel¹,De Messemaeker Joke¹,Witters Liesbeth¹,Van Sever Koen¹,Iacovo Serena¹,Dewilde Sven¹,Stucchi Michele¹,De Vos Joeri¹,Beyer Gerald¹,Miller Andy¹,Beyne Eric¹

Affiliation:

1. IMEC,Leuven,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10413659/10413660/10413829.pdf?arnumber=10413829

Reference9 articles.

1. Novel Cu/SiCN surface topography control for 1 μm pitch hybrid wafer-to-wafer bonding

2. Scalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology

3. 3D SoC integration, beyond 2.5D chiplets

4. 700nm pitch Cu/SiCN wafer-to-wafer hybrid bonding

5. Optimization of Cu/SiCN CMP Process for Surface Preparation Targeting W2W Hybrid Bonding;Dewilde;Wafer Bond,2022

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring Bonding Mechanism of SiCN for Hybrid Bonding;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

2. Investigation of Distortion in Wafer-to-wafer Bonding with Highly Bowed Wafers;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

3. Low Temperature Wafer Level Hybrid Bonding Enabled by Advanced SiCN and Surface Activation;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

4. RF modelling and characterization of TSVs and inductive links of hybrid bonded devices;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

5. Scaling Cu/SiCN Wafer-to-Wafer Hybrid Bonding down to 400 nm interconnect pitch;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28