RF modelling and characterization of TSVs and inductive links of hybrid bonded devices-Reference-Cited by-同舟云学术

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RF modelling and characterization of TSVs and inductive links of hybrid bonded devices

Published:2024-05-28 Issue: Volume: Page:754-759
ISSN:
Container-title:2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
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Author:

Sun Xiao¹,Su Chin-Ya¹,chen Shih-Hung¹,chew Soon Aik¹,Zhang Boyao¹,Beyne Eric¹

Affiliation:

1. imec,Leuven,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10564841/10564831/10565131.pdf?arnumber=10565131

Reference6 articles.

1. The Challenges and Solutions of Cu/SiCN Wafer-to-Wafer Hybrid Bonding Scaling Down to 400nm Pitch

2. Modeling and Characterization of TSV-Induced Noise Coupling;Sun,2018

3. A Simple and Efficient RF Technique for TSV Characterization

4. Simulation and analysis of through silicon via (TSV) based inductance structures

5. Interference from power/signal lines and to SRAM circuits in 65nm CMOS inductive-coupling link

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