The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs-Reference-Cited by-同舟云学术

The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs

Published:2022 Issue: Volume:10 Page:854-859
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Huang P.¹^ORCID,Luc Q. H.²^ORCID,Sibaja-Hernandez A.³^ORCID,Ko H. L.¹^ORCID,Wu J. Y.¹,Tran N. A.²,Collaert N.³,Chang E. Y.⁴^ORCID

Affiliation:

1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

3. IMEC, Leuven, Belgium

4. Department of Materials Science and Engineering, Department of Electronics Engineering, and the International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09913223.pdf?arnumber=9913223

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