Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4759275
Reference12 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. Enhancing hole mobility in III-V semiconductors
3. Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length
4. Explicit Continuous Model for Long-Channel Undoped Surrounding Gate MOSFETs
5. Size-Dependent-Transport Study of $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
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1. Electrical Characteristics of In0.53Ga0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes;IEEE Transactions on Electron Devices;2022-08
2. The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs;IEEE Journal of the Electron Devices Society;2022
3. Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs;Solid-State Electronics;2021-11
4. A unified compact model for electrostatics of III–V GAA transistors with different geometries;Journal of Computational Electronics;2021-08-07
5. A Compact Charge and Surface Potential Model for III–V Cylindrical Nanowire Transistors;IEEE Transactions on Electron Devices;2019-01
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