Electrical Characteristics of In<sub>0.53</sub>Ga<sub>0.47</sub>As Gate-All-Around MOSFETs With Different Nanowire Shapes-Reference-Cited by-同舟云学术

Electrical Characteristics of In_0.53Ga_0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes

Published:2022-08 Issue:8 Volume:69 Page:4183-4187
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ko Hua-Lun¹^ORCID,Luc Quang Ho²^ORCID,Huang Ping¹^ORCID,Chen Si-Meng¹^ORCID,Wu Jing-Yuan¹,Tran Nhan-Ai²,Chang Edward Yi³^ORCID

Affiliation:

1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

3. Department of Materials Science and Engineering and the Department of Electronics Engineering, International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9839401/09796143.pdf?arnumber=9796143

Reference40 articles.

1. Theoretical Investigation of DIBL Characteristics for Scaled Tri-Gate InGaAs-OI n-MOSFETs Including Sensitivity to Process Variations

2. Demonstration of Geometrical Impact of Nanowire on GaAs1–x Sb x Transistor Performance

3. Investigation of nanowire size dependency on TSNWFET

4. Physics of Semiconductor Devices

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